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Journal articles

1. M. Myronov, A. Bogan and S. Studenikin 鈥淗ole mobility in compressively strained germanium on silicon exceeds 7 脳 10⁶ cm²V^鈭�1s^鈭�1鈥�Materials Today 90 Pages 314-321 (2025)Link opens in a new window.

2. Y. Wang, B. Jazizadeh, Z. Yu, A. Aljaghwani, P. Waldron, S. Studenikin, and M. Myronov "Impact of quantum well thickness on hole mobility in strained germanium heterostructures"
3. S. Bugu, S. Biradar, A. Blake, C. W. Liu, M. Myronov, R. Duffy, G. Fagas, and N. Petkov. 鈥淗igh-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices鈥� Acs Applied Electronic Materials Vol. 7 Issue 2 Pages 652-659 (2025)Link opens in a new window.

 

Conferences

1. M. Hanif, S.Ali, N.Petkov, G.Fagas, R.Murphy, S.Bugu, M.Myronov, S.Ayinde, C.G.Smith, S.Bose, R. Duffy. 鈥淕ated Hall-bar devices to evaluate the electronic properties of Ge quantum well heterostructures 鈥淓-MRS Fall" September 2025, Warsaw, Poland.