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Department of Physics

Publications

Journals, Conferences and Books

Publications since year 2008:

Journals:

  1. M. Myronov, A. Bogan and S. Studenikin 鈥淗ole mobility in compressively strained germanium on silicon exceeds 7 脳 106 cm2V鈭1s鈭1鈥 Materials Today 90 Pages 314-321 (2025).Link opens in a new window

  2. Y. Karimi, S. Studenikin, M. Myronov, P. Waldron, N. Tait and K. Mnaymneh 鈥淪urface acoustic wave-induced strain engineering for quantum dot control in a non-piezoelectric material鈥

  3. B. Jazizadeh and M. Myronov "Tunability unraveled for elastic properties of cubic silicon carbide thin film compound semiconductor"  
  4. Y. Wang, B. Jazizadeh, Z. Yu, A. Aljaghwani, P. Waldron, S. Studenikin, and M. Myronov "Impact of quantum well thickness on hole mobility in strained germanium heterostructures"
  5. S. Bugu, S. Biradar, A. Blake, C. W. Liu, M. Myronov, R. Duffy, G. Fagas, and N. Petkov. 鈥淗igh-Fidelity TiN Processing Modes for Multigate Ge-Based Quantum Devices鈥 Acs Applied Electronic Materials Vol. 7 Issue 2 Pages 652-659 (2025)Link opens in a new window.
  6. E. Longo, O. Concepci贸n, R. Mantovan, M. Fanciulli, M. Myronov, E. Bonera, J. Pedrini, D. Buca, and F. Pezzoli. "Spin Pumping in Epitaxial Ge1-xSnx Alloys " Advanced Quantum Technologies 2400508 (2024).Link opens in a new window
  7. B. Jazizadeh and M. Myronov "In–situ strain control in epitaxial silicon carbide compound semiconductor" Scientific Reports Vol. 14 Issue 1, 30325 (2024).Link opens in a new window
  8. M. Myronov, P. Jahandar, S. Rossi, K. Sewell, F. Murphy-Armando and F. Pezzoli "Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature"
  9. P. Jahandar and M. Myronov "Impact of strain relaxation on the growth rate of heteroepitaxial germanium tin binary alloy" Journal of Semiconductors Vol. 45 Issue 10 102101 (2024)Link opens in a new window.
  10. M. Myronov, G. Colston "Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature" Materials Today Communications 38 108312 (2024)Link opens in a new window.
  11. M. Myronov, P. Waldron, P. Barrios, A. Bogan and S. Studenikin 鈥淓lectric field-tuneable crossing of hole Zeeman splitting and orbital gaps in compressive strained germanium semiconductor on silicon鈥 Communications Materials 4 104 (2023).
  12. S. Ayinde and M. Myronov 鈥淩evealing low thermal conductivity of germanium tin semiconductor at room-temperature鈥 Advanced Materials Interfaces 2300711 (2023).
  13. M. Gaifullin, S. Lee, J.F. Kelleher, S. Kabra, M. Myronov, B.E. Evans and O. Kirichek "Influence of mechanical stress on electron transport properties of second-generation high-temperature superconducting tapes." Low Temperature Physics, 49 (8). pp. 994-997 (2023).
  14. N. Petkov, M. Georgieva, S. Bugu, R. Duffy, B. McCarthy, M. Myronov, et al. "Electron beam lithography and dimensional metrology for fin and nanowire devices on Ge, SiGe and GeOI substrates" Microelectronic Engineering Pages 112071 (2023).
  15. M. Myronov, J. Kycia, P. Waldron, W. Jiang, P. Barrios, A. Bogan, P. Coleridge and S. Studenikin "Holes Outperform Electrons in Group IV Semiconductor Materials" Small Science 2200094 (2023).
  16. Y. Gul, S. N. Holmes, C. W. Cho, B. Piot, M. Myronov and M. Pepper "Two-dimensional localization in GeSn" Journal of Physics-Condensed Matter 34 48 485301 (2022).
  17. M. Myronov, G. Colston, J. Davies and L. Michael "A fast approach to measuring the thickness uniformity of a homoepilayer grown on to any type of silicon wafer" Semiconductor Science and Technology  37 065003 (2022)Link opens in a new window.

  18. G. Colston, O. Newell, S. D. Rhead, V. S. A. Shah and M. Myronov "Strain mapping of silicon carbon suspended membranes." Materials & Design 211 110135 (2021).Link opens in a new window

  19. E. Rogowicz, J. Kopaczek, J. Kutrowska-Girzycka, M. Myronov, R. Kudrawiec and M. Syperek "Carrier Dynamics in Thin Germanium–Tin Epilayers." ACS Applied Electronic Materials 3(1): 344-352 (2021).
  20. Giordano Scappucci, Christoph Kloeffel, Floris Zwanenburg, Daniel Loss, Maksym Myronov, Jian-Jun Zhang, Silvano De Franceschi, Georgios Katsaros, and Menno Veldhorst "The germanium quantum information route" Nature Reviews Materials 6, 926–943 (2021).
  21. E. Vitiello, S. Rossi, C. A. Broderick, G. Gravina, A. Balocchi, X. Marie, E. P. O鈥橰eilly, M. Myronov and F. Pezzoli "Continuous-Wave Magneto-Optical Determination of the Carrier Lifetime in Coherent Ge1-xSnx/Ge Heterostructures." Physical Review Applied 14(6): 064068 (2020)Link opens in a new window.
  22. Y. Gul, M. Myronov, S.N. Holmes and M. Pepper, "Activated and Metallic Conduction in p-Type Modulation-Doped Ge-Sn Devices" Physical Review Applied 14, 054064 (2020).
  23. L.Q. Zhou, G. Colston, M. Myronov, D. R. Leadley, O. Trushkevych, V. Shah and R. S. Edwards "Ultrasonic Inspection and Self-Healing of Ge and 3C-SiC Semiconductor Membranes." Journal of Microelectromechanical Systems 29(3): 370-377 (2020).
  24. J. Keller, J., G. Scalari, F. Appugliese, S. Rajabali, M. Beck, J. Haase, C. A. Lehner, W. Wegscheider, M. Failla, M. Myronov, D. R. Leadley, J. Lloyd-Hughes, P. Nataf and J. Faist (2020). "Landau polaritons in highly nonparabolic two-dimensional gases in the ultrastrong coupling regime." Physical Review B 101(7): 7 (2020).
  25. A. Mukanova, A. Serikkazyyeva, A. Nurpeissova, S. S. Kim, M. Myronov and Z. Bakenov "Understanding the effect of p-, n-type dopants and vinyl carbonate electrolyte additive on electrochemical performance of Si thin film anodes for lithium-ion battery." Electrochimica Acta 330 (2020).
  26. Y.A. Bioud, A. Boucherif, M. Myronov, A. Soltani, G. Patriarche, N. Braidy, M. Jellite, D. Drouin and R. Ar猫s "Uprooting defects to enable high-performance III–V optoelectronic devices on silicon." Nature Communications 10(1): 4322 (2019).
  27. J.D. Murphy, A. I. Pointon, N. E. Grant, V. A. Shah, M. Myronov, V. V. Voronkov and R. J. Falster "Minority carrier lifetime in indium doped silicon for photovoltaics." Progress in Photovoltaics: 12, 1-12 (2019).
  28. S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov and F. Pezzoli "Spin-coherent dynamics and carrier lifetime in strained GeSn semiconductors on silicon." Physical Review B 99(3): 035202 (2019).
  29. R. Mizokuchi, R. Maurand, F. Vigneau, M. Myronov and S. De Franceschi "Ballistic One-Dimensional Holes with Strong g-Factor Anisotropy in Germanium." Nano Letters 18(8): 4861-4865 (2018).

  30. G. Colston and M. Myronov "Electrical properties of n-type 3C-SiC epilayers in situ doped with extremely high levels of phosphorus." Semiconductor Science and Technology 33(11) 114007 (2018).

  31. C.J. Clausen, I. A. Fischer, D. Weisshaupt, F. Baerwolf, B. Tillack, G. Colston, M. Myronov, M. Oehme and J. Schulze "Electrical characterization of n-doped SiGeSn diodes with high Sn content." Semiconductor Science and Technology 33(12) 124017 (2018).

  32. A. Mukanova, A. Nurpeissova, A. Zharbossyn, S.-S. Kim, M. Myronov and Z. Bakenov "N-type doped amorphous Si thin film on a surface of rough current collector as anode for Li-ion batteries." Materials Today: Proceedings 5(11, Part 1): 22759-22763 (2018).

  33. S. Bechler, M. Kern, H. S. Funk, G. Colston, I. A. Fischer, D. Weisshaupt, M. Myronov, J. van Slageren and J. Schulze "Formation of Mn5Ge3 by thermal annealing of evaporated Mn on doped Ge on Si(111)." Semiconductor Science and Technology 33(9): 9 095008 (2018).

  34. A. Mukanova, A. Zharbossyn, A. Nurpeissova, S. S. Kim, M. Myronov and Z. Bakenov "Electrochemical Study of Graphene Coated Nickel Foam as an Anode for Lithium-Ion Battery." Eurasian Chemico-Technological Journal 20(2): 91-97 (2018).

  35. Y. Gul, S. N. Holmes, M. Myronov, S. Kumar and M. Pepper "Self-organised fractional quantisation in a hole quantum wire." Journal of Physics: Condensed Matter 30(9): 09LT01 (2018).

  36. P. Jahandar, D. Weisshaupt, G. Colston, P. Allred, J. Schulze and M. Myronov "The effect of Ge precursor on the heteroepitaxy of Ge1-xSnx epilayers on a Si (001) substrate." Semiconductor Science and Technology 33(3) 034003 (2018).

  37. V. Sivadasan, S. Rhead, D. Leadley and M. Myronov "Kirkendall void formation in reverse step graded Si1-xGex/Ge/Si(001) virtual substrates." Semiconductor Science and Technology 33(2) 024002 (2018).

  38. A. Mukanova, A. Nurpeissova, S.-S. Kim, M. Myronov and Z. Bakenov "N-Type Doped Silicon Thin Film on a Porous Cu Current Collector as the Negative Electrode for Li-Ion Batteries." ChemistryOpen 7(1): 92-96 (2018).

  39. C. Morrison and M. Myronov "Electronic transport anisotropy of 2D carriers in biaxial compressive strained germanium." Applied Physics Letters 111(19): 192103 (2017).

  40. Y. Gul, S. N. Holmes, P. J. Newton, D. J. P. Ellis, C. Morrison, M. Pepper, C. H. W. Barnes and M. Myronov "Quantum ballistic transport in strained epitaxial germanium." Applied Physics Letters 111(23): 233512 (2017).

  41. A. Mukanova, A. Nurpeissova, A. Urazbayev, S. S. Kim, M. Myronov and Z. Bakenov "Silicon thin film on graphene coated nickel foam as an anode for Li-ion batteries." Electrochimica Acta 258: 800-806 (2017).

  42. D.J. Norris, M. Myronov, D. R. Leadley and T. Walther "Comparison of cross-sectional transmission electron microscope studies of thin germanium epilayers grown on differently oriented silicon wafers." Journal of Microscopy 268(3): 288-297 (2017).

  43. R.W. Millar, D. C. S. Dumas, K. F. Gallacher, P. Jahandar, C. MacGregor, M. Myronov and D. J. Paul "Mid-infrared light emission >3碌m wavelength from tensile strained GeSn microdisks." Optics Express 25(21): 25374-25385 (2017).
  44. G. Colston and M. Myronov "Controlling the optical properties of monocrystalline 3C-SiC heteroepitaxially grown on silicon at low temperatures." Semiconductor Science and Technology 32(11): 6 114005 (2017).
  45. V. Kaganer, T. Ulyanenkova, A. Benediktovitch, M. Myronov and A. Ulyanenkov (2017). "Bunches of misfit dislocations on the onset of relaxation of Si0.4Ge0.6/Si(001) epitaxial films revealed by high-resolution x-ray diffraction." Journal of Applied Physics 122(10): 105302 (2017).
  46. R. Mizokuchi, P. Torresani, R. Maurand, Z. Zeng, Y. M. Niquet, M. Myronov and S. De Franceschi "Hole weak anti-localization in a strained-Ge surface quantum well." Applied Physics Letters 111(6) 063102 (2017).

  47. L. Q. Zhou, G. Colston, M. J. Pearce, R. G. Prince, M. Myronov, D. R. Leadley, O. Trushkevych and R. S. Edwards "Non-linear vibrational response of Ge and SiC membranes." Applied Physics Letters 111(1) 011904 (2017).

  48. C.S. Knox, C. Morrison, F. Herling, D. A. Ritchie, O. Newell, M. Myronov, E. H. Linfield and C. H. Marrows "Partial hybridisation of electron-hole states in an InAs/GaSb double quantum well heterostructure." Semiconductor Science and Technology 32(10): 104002 (2017).

  49. F. Herling, C. Morrison, C. S. Knox, S. Zhang, O. Newell, M. Myronov, E. H. Linfield and C. H. Marrows "Spin-orbit interaction in InAs/GaSb heterostructures quantified by weak antilocalization." Physical Review B 95(15): 155307 (2017)
  50. P.J. Newton, R. Mansell, S. N. Holmes, M. Myronov and C. H. W. Barnes "Weak localization and weak antilocalization in doped germanium epilayers." Applied Physics Letters 110(6): 062101 (2017).
  51. L. Woodend, P.M Gammon, V. Shah, A. P茅rez-Tom谩s, F. Li, D. P. Hamilton, M. Myronov and P.A. Mawby 鈥淐ryogenic characterisation and modelling of commercial SiC MOSFETs.鈥 Materials Science Forum, 897 . pp. 557-560 (2017).
  52. M. Failla, J. Keller, G. Scalari, C. Maissen, J. Faist, C. Reichl, W. Wegscheider, O. J. Newell, D. R. Leadley, M. Myronov and J. Lloyd-Hughes "Terahertz quantum Hall effect for spin-split heavy-hole gases in strained Ge quantum wells." New Journal of Physics 18(11): 113036 (2016).

  53. C. Morrison and M. Myronov "Strained germanium for applications in spintronics." Physica status solidi (a) 213(11): 2809-2819 (2016). Feature Article

  54. F. Pezzoli, A. Giorgioni, D. Patchett and M. Myronov "Temperature-Dependent Photoluminescence Characteristics of GeSn Epitaxial Layers." ACS Photonics 3(11): 2004-2009 (2016).
  55. C. Morrison, C. Casteleiro, D. R. Leadley and M. Myronov "Complex quantum transport in a modulation doped strained Ge quantum well heterostructure with a high mobility 2D hole gas." Applied Physics Letters 109(10): 102103 (2016).

  56. S.N. Holmes, P. J. Newton, J. Llandro, R. Mansell, C. H. W. Barnes, C. Morrison and M. Myronov "Spin-splitting in p-type Ge devices." Journal of Applied Physics 120(8): 085702 (2016).

  57. G. Colston, S. D. Rhead, V. A. Shah, O. J. Newell, I. P. Dolbnya, D. R. Leadley and M. Myronov "Mapping the strain and tilt of a suspended 3C-SiC membrane through micro X-ray diffraction." Materials & Design 103: 244-248 (2016).
  58. C. Morrison, J. Foronda, P. Wi艣niewski, S. D. Rhead, D. R. Leadley and M. Myronov "Evidence of strong spin–orbit interaction in strained epitaxial germanium." Thin Solid Films 602: 84-89 (2016).
  59. T.L.R. Brien, P. A. R. Ade, P. S. Barry, C. J. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H. C. Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall and P. D. Mauskopf "Optical Response of Strained- and Unstrained-Silicon Cold-Electron Bolometers." Journal of Low Temperature Physics: 184, 1, 231-237 (2016).
  60. D. Gunnarsson, J. S. Richardson-Bullock, M. J. Prest, H. Q. Nguyen, A. V. Timofeev, V. A. Shah, T. E. Whall, E. H. C. Parker, D. R. Leadley, M. Myronov and M. Prunnila "Interfacial Engineering of Semiconductor–Superconductor Junctions for High Performance Micro-Coolers." Scientific Reports 5: 17398, (2015).
  61. G. Colston, M. Myronov, S. Rhead and D. Leadley "Analysis of surface defects in Si 1鈭 y C y epilayers formed by the oversaturation of carbon." Semiconductor Science and Technology 30(11): 114003, (2015).
  62. J.E. Halpin, S.D. Rhead, A.M. Sanchez, M. Myronov and D.R. Leadley "Growth of complex SiGe/Ge superlattices by reduced pressure chemical vapour deposition at low temperature." Semiconductor Science and Technology 30(11): 114009, (2015).
  63. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Transport anisotropy in Ge quantum wells in the absence of quantum oscillations." Physical Review B 92(16): 161405, (2015).
  64. F. Li, Y. Sharma, V. Shah, M. Jennings, A. Perez-Tomas, M. Myronov, C. Fisher, D. Leadley and P. Mawby "Electrical activation of nitrogen heavily implanted 3C-SiC(100)." Applied Surface Science 353: 958-963, 2015.
  65. M. Failla, M. Myronov, C. Morrison, D. R. Leadley and J. Lloyd-Hughes "Narrow heavy-hole cyclotron resonances split by the cubic Rashba spin-orbit interaction in strained germanium quantum wells." Physical Review B 92(4): 045303, (2015).
  66. P.J. Newton, J. Llandro, R. Mansell, S. N. Holmes, C. Morrison, J. Foronda, M. Myronov, D. R. Leadley and C. H. W. Barnes "Magnetotransport in p-type Ge quantum well narrow wire arrays." Applied Physics Letters 106(17): 172102, 2015.
  67. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Spinless composite fermions in an ultrahigh-quality strained Ge quantum well." Physical Review B Rapid Communications 91(24): 241303(R), 2015.
  68. S. Dushenko, M. Koike, Y. Ando, T. Shinjo, M. Myronov and M. Shiraishi "Experimental Demonstration of Room-Temperature Spin Transport in n-Type Germanium Epilayers." Physical Review Letters 114(19): 196602, 2015.
  69. Q. Shi, M. A. Zudov, C. Morrison and M. Myronov "Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields." Physical Review B Rapid Communications 91(20): 201301(R), 2015.
  70. M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda and D. Leadley "Revealing high room and low temperatures mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate." Solid-State Electronics 110(0): 35-39, 2015.
  71. A. Benediktovitch, A. Zhylik, T. Ulyanenkova, M. Myronov and A. Ulyanenkov "Characterization of dislocations in germanium layers grown on (011)- and (111)-oriented silicon by coplanar and noncoplanar X-ray diffraction" Journal of Applied Crystallography 48(3): 655-665, 2015.
  72. T. Ulyanenkova, M. Myronov and A. Ulyanenkov (2015). "Boron doped cubic silicon probed by high resolution X-ray diffraction." Physica Status Solidi (c) 12(3), 255–258, 2015.
  73. V.A. Shah, S. D. Rhead, J. Finch, M. Myronov, J. S. Reparaz, R. J. Morris, N. R. Wilson, V. Kachkanov, I. P. Dolbnya, J. E. Halpin, D. Patchett, P. Allred, G. Colston, K. J. S. Sawhney, C. M. S. Torres and D. R. Leadley "Electrical properties and strain distribution of Ge suspended structures." Solid-State Electronics 108: 13-18, 2015.
  74. J.S. Richardson-Bullock, M. J. Prest, V. A. Shah, D. Gunnarsson, M. Prunnila, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker and D. R. Leadley "Comparison of electron-phonon and hole-phonon energy loss rates in silicon." Solid-State Electronics 103: 40-43, 2015.
  75. C. Morrison, P. Wi艣niewski, S. D. Rhead, J. Foronda, D. R. Leadley and M. Myronov "Observation of Rashba zero-field spin splitting in a strained germanium 2D hole gas." Applied Physics Letters 105(18): 182401, 2014.
  76. J. Foronda, C. Morrison, J. E. Halpin, S. D. Rhead and M. Myronov "Weak antilocalization of high mobility holes in a strained Germanium quantum well heterostructure." Journal of Physics-Condensed Matter 27 (2) 022201, 2014.
  77. D.C.S. Dumas, K. Gallacher, S. Rhead, M. Myronov, D. R. Leadley and D. J. Paul "Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at 位 = 1550 nm." Optics Express 22(16): 19284-19292, 2014.
  78. T.L.R. Brien, P. A. R. Ade, P. S. Barry, C. Dunscombe, D. R. Leadley, D. V. Morozov, M. Myronov, E. H. C. Parker, M. J. Prest, M. Prunnila, R. V. Sudiwala, T. E. Whall and P. D. Mauskopf "A strained silicon cold electron bolometer using Schottky contacts." Applied Physics Letters 105(4), 043509, 2014.
  79. V.A. Shah, M. Myronov, S. D. Rhead, J. E. Halpin, A. Shchepetov, M. J. Prest, M. Prunnila, T. E. Whall, E. H. C. Parker and D. R. Leadley "Flat single crystal Ge membranes for sensors and opto-electronic integrated circuitry." Solid-State Electronics 98: 93-98, 2014.
  80. O. Trushkevych, V.A. Shah, M. Myronov, J.E. Halpin, S.D. Rhead, M.J. Prest, D.R. Leadley and R.S. Edwards "Laser-vibrometric ultrasonic characterization of resonant modes and quality factors of Ge membranes." Science and Technology of Advanced Materials 15(2): 025004, 2014.
  81. V.A. Shah, S.D. Rhead, J.E. Halpin, O. Trushkevych, E. Ch谩vez-脕ngel, A. Shchepetov, V. Kachkanov, N.R. Wilson, M. Myronov, J.S. Reparaz, R.S. Edwards, M.R. Wagner, F. Alzina, I.P. Dolbnya, D.H. Patchett, P.S. Allred, M.J. Prest, P.M. Gammon, M. Prunnila, T.E. Whall, E.H.C. Parker, C.M. Sotomayor Torres and D.R. Leadley "High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry." Journal of Applied Physics 115(14): 144307, 2014.
  82. M. Myronov, C. Morrison, J. Halpin, S. Rhead, C. Casteleiro, J. Foronda, V. A. Shah and D. Leadley "An extremely high room temperature mobility of two-dimensional holes in a strained Ge quantum well heterostructure grown by reduced pressure chemical vapor deposition." Japanese Journal of Applied Physics 53(4S): 04EH02, 2014.
  83. C. Wongwanitwattana, V. A. Shah, M. Myronov, E. H. C. Parker, T. Whall and D. R. Leadley "Precision plasma etching of Si, Ge, and Ge:P by SF6 with added O2." Journal of Vacuum Science & Technology A 32(3): 031302, 2014.
  84. A.H. Hassan, R. J. H. Morris, O. A. Mironov, R. Beanland, D. Walker, S. Huband, A. Dobbie, M. Myronov and D. R. Leadley "Anisotropy in the hole mobility measured along the [110] and [1炉10] orientations in a strained Ge quantum well." Applied Physics Letters 104(13): 132108, 2014.
  85. D.J. Norris, Y. Qiu, A. Dobbie, M. Myronov and T. Walther "Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)." Journal of Applied Physics 115 (1) 012003, 2014.
  86. P.M. Gammon, A. Perez-Tomas, V. A. Shah, O. Vavasour, E. Donchev, J. S. Pang, M. Myronov, C. A. Fisher, M. R. Jennings, D. R. Leadley and P. A. Mawby "Modelling the inhomogeneous SiC Schottky interface." Journal of Applied Physics 114(22), 223704 2014.
  87. O.A. Mironov, A.H.A. Hassan, R.J.H. Morris, A. Dobbie, M. Uhlarz, D. Chrastina, J.P. Hague, S. Kiatgamolchai, R. Beanland, S. Gabani, I.B. Berkutov, M. Helm, O. Drachenko, M. Myronov and D. R. Leadley (2014). "Ultra high hole mobilities in a pure strained Ge quantum well." Thin Solid Films 557(0): 329-333, 2014.
  88. C.W. Burrows, C. W., A. Dobbie, M. Myronov, T. P. A. Hase, S. B. Wilkins, M. Walker, J. J. Mudd, I. Maskery, M. R. Lees, C. F. McConville, D. R. Leadley and G. R. Bell "Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates." Crystal Growth & Design 13(11): 4923-4929, 2013.
  89. V. Huy Nguyen, A. Dobbie, M. Myronov and D. R. Leadley "High quality relaxed germanium layers grown on (110) and (111) silicon substrates with reduced stacking fault formation." Journal of Applied Physics 114(15): -154306, 2013.
  90. R.E. Warburton, G. Intermite, M. Myronov, P. Allred, D. R. Leadley, K. Gallacher, D. J. Paul, N. J. Pilgrim, L. J. M. Lever, Z. Ikonic, R. W. Kelsall, E. Huante-Ceron, A. P. Knights and G. S. Buller "Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550nm." IEEE Transactions on Electron Devices PP(99): 1-1, (2013).
  91. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov "Characterization of SiGe thin films using a laboratory X-ray instrument." Journal of Applied Crystallography 46: 898-902, (2013).
  92. S. Wirths, A. T. Tiedemann, Z. Ikonic, P. Harrison, B. Hollander, T. Stoica, G. Mussler, M. Myronov, J. M. Hartmann, D. Grutzmacher, D. Buca and S. Mantl "Band engineering and growth of tensile strained Ge/(Si)GeSn heterostructures for tunnel field effect transistors." Applied Physics Letters 102(19): 192103, 2013.
  93. B. Xu, C. Li, M. Myronov and K. Fobelets "n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation." Solid-State Electronics 83: 107-112, 2013.
  94. V.A. Shah, M. Myronov, A. Dobbie and D. R. Leadley "Introduction of Terraces into a Reverse Linearly Graded SiGe Buffer on Si(001) Substrate and Their Effect on the Buffer's Structural Properties." ECS Journal of Solid State Science and Technology 2(3): Q40-Q44, 2013.
  95. T. Walther, D. J. Norris, Y. Qiu, A. Dobbie, M. Myronov and D. R. Leadley "The Stranski–Krastanow transition in SiGe epitaxy investigated by scanning transmission electron microscopy." Physica status solidi (a) 210(1): 187-190, 2013.
  96. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov "Characterization of SiGe thin films using a laboratory X-ray instrument." Journal of Applied Crystallography 46: 898-902, 2013.
  97. R.J.H. Morris, M. G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D. R. Leadley "O-2(+) probe-sample conditions for ultra low energy SIMS depth profiling of nanometre scale Si0.4Ge0.6/Ge quantum wells." Surface and Interface Analysis 45(1): 348-351, 2013.
  98. B. Xu, C. Li, K. Thielemans, M. Myronov and K. Fobelets "Thermoelectric Performance of Si0.8Ge0.2 Nanowire Arrays." Ieee Transactions on Electron Devices 59(12): 3193-3198, 2012.
  99. N. Van Huy, A. Dobbie, M. Myronov, D. J. Norris, T. Walther and D. R. Leadley "Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates." Thin Solid Films 520(8): 3222-3226, 2012.
  100. V.A. Shah, M. Myronov, C. Wongwanitwatana, L. Bawden, M. J. Prest, J. S. Richardson-Bullock, S. Rhead, E. H. C. Parker, T. E. Whall and D. R. Leadley "Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures." Science and Technology of Advanced Materials 13(5), 2012.
  101. V.A. Shah, A. Dobbie, M. Myronov and D. R. Leadley "Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integration." Thin Solid Films 520(8): 3227-3231, 2012.
  102. R.J.H. Morris, M. G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D. R. Leadley "Overcoming Low Ge Ionization and Erosion Rate Variation for Quantitative Ultralow Energy Secondary Ion Mass Spectrometry Depth Profiles of Si1-xGex/Ge Quantum Well Structures." Analytical Chemistry 84(5): 2292-2298, 2012.
  103. P. Velha, D.J. Paul, M. Myronov and D.R. Leadley, "Long Wavelength >1.9 渭m Germanium for Optoelectronics Using Process Induced Strain" Electrochemical Society Transactions 50(9), pp.779-782, 2012.
  104. K. Gallacher, P. Velha, D.J. Paul, I. MacLaren, M. Myronov and D.R. Leadley, "Low Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process" Electrochemical Society Transactions 50(9), pp.1081-1084, 2012.
  105. P. Velha, K. Gallacher, D. Dumas, D.J. Paul, M. Myronov and D.R. Leadley "Direct Band-Gap Electroluminescence from Strained n-Ge Light Emitting Diodes" Electrochemical Society Transactions 50(9), pp.305-308, 2012.
  106. L. Lever, Z. Ikonic, A. Valavanis, R. W. Kelsall, M. Myronov, D. R. Leadley, Y. Hu, N. Owens, F. Y. Gardes and G. T. Reed "Optical absorption in highly strained Ge/SiGe quantum wells: The role of Gamma ->Delta scattering." Journal of Applied Physics 112(12), 2012.
  107. K. Gallacher, P. Velha, D. J. Paul, I. MacLaren, M. Myronov and D. R. Leadley "Ohmic contacts to n-type germanium with low specific contact resistivity." Applied Physics Letters 100(2), 2012.
  108. A. Dobbie, N. Van Huy, M. Myronov, T. E. Whall, E. H. C. Parker and D. R. Leadley "Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process." Applied Physics Express 5(7), 2012.
  109. A. Dobbie, N. Van Huy, R. J. H. Morris, X.-C. Liu, M. Myronov and D. R. Leadley "Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers." Journal of the Electrochemical Society 159(5): H490-H496, 2012.
  110. A. Dobbie, M. Myronov, R. J. H. Morris, A. H. A. Hassan, M. J. Prest, V. A. Shah, E. H. C. Parker, T. E. Whall and D. R. Leadley "Ultra-high hole mobility exceeding one million in a strained germanium quantum well." Applied Physics Letters 101(17), 2012.
  111. L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F. Y. Gardes, I. P. Marko, S. J. Sweeney, Z. Ikonic, D. R. Leadley, G. T. Reed and R. W. Kelsall "Modulation of the absorption coefficient at 1.3 um in Ge/SiGe multiple quantum well heterostructures on silicon." Optics Letters 36(21): 4158-4160 (2011).
  112. A. Zhylik, F. Rinaldi, M. Myronov, K. Saito, S. Menzel, A. Dobbie, D. R. Leadley, T. Ulyanenkova, I. D. Feranchuk and A. Ulyanenkov "High-resolution reciprocal space mapping of distributed Bragg reflectors and virtual substrates." Physica Status Solidi a-Applications and Materials Science 208(11): 2582-2586, 2011.
  113. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys 鈥淟ow-frequency noise characterization of strained germanium pMOSFETs鈥 IEEE Transactions on Electron Devices 58 (9), 3132-3139, 2011.
  114. Y. Kawamura, M. Uematsu, Y. Hoshi, K. Sawano, M. Myronov, Y. Shiraki, E. E. Haller and K. M. Itoh 鈥淪elf-diffusion in compressively strained Ge鈥 Journal of Applied Physics 110 (3), 034906, 2011.
  115. A. Zhylik, A. Benediktovich, A. Ulyanenkov, H. Guerault, M. Myronov, A. Dobbie, D. R. Leadley and T. Ulyanenkova. "High-resolution x-ray diffraction investigation of relaxation and dislocations in SiGe layers grown on (001), (011), and (111) Si substrates." Journal of Applied Physics 109 (12), 123714, 2011.
  116. V.A. Shah, A. Dobbie, M. Myronov and D. R. Leadley "High quality relaxed Ge layers grown directly on a Si(001) substrate." Solid-State Electronics 62 (1), 189-194, 2011.
  117. J.T. Muhonen, J. T., M. J. Prest, M. Prunnila, D. Gunnarsson, V. A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker and D. R. Leadley "Strain dependence of electron-phonon energy loss rate in many-valley semiconductors." Applied Physics Letters 98 (18), 182103, 2011.
  118. J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G. Winderickx, E. Vrancken, W. Vanherle, W.-E. Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. P. Absil, S. Biesemans and T. Hoffmann "High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO(2) Gate Dielectric." Japanese Journal of Applied Physics 50 (4), 04DC17, 2011.
  119. Liu, X.-C., R. J. H. Morris, M. Myronov, A. Dobbie and D. R. Leadley "Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures." Journal of Physics D-Applied Physics 44 (7) 079501, (2011).
  120. Xue-Chao Liu, M. Myronov, A. Dobbie, R.J.H. Morris and D.R. Leadley 鈥淗igh-quality Ge/Si0.4Ge0.6 multiple quantum wells grown by reduced pressure chemical vapour deposition for photonic applications: growth by reduced pressure chemical vapour deposition and structural characteristics鈥 Journal of Physics D: Applied Physics 44 (5), 055102, 2011.
  121. M. Myronov, Xue-Chao Liu A. Dobbie and D.R. Leadley 鈥淐ontrol of Epilayer thickness during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD鈥 submitted to Journal of Crystal Growth 318 (1), 337-340, 2011.
  122. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys 鈥淒efect-related excess low-frequency noise in Ge-on-Si pMOSFETs鈥 submitted to Electron Device Letter 32 (1), 87-89, 2011.
  123. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley 鈥淎ccuracy of thickness measurement for Ge epilayer grown on SiGe/Ge/Si(100) heterostructure by X-ray diffraction and reflectivity鈥 Journal of Vacuum Science and Technology B 29 (1), 011010, 2011.
  124. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley 鈥淣on-destructive thickness characterization of Si based heterostructure by X-ray diffraction and reflectivity鈥 Solid State Electronics 60 (1), 42-45, 2011.
  125. M. Myronov, V.A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen, D.R. Leadley and E.H.C. Parker 鈥淗ighly strained Si epilayers grown on SiGe/Si(100) virtual substrate by Reduced Pressure Chemical Vapour Deposition鈥 Physics Status Solidi 8 (3), 925-955, 2011.
  126. M. Myronov, A. Dobbie, V. Shah, Van H. Nguyen, Xue-Chao Liu, and D. R. Leadley 鈥淗igh quality strained Ge epilayers on a Si0.2Ge0.8/Ge/Si(100) global strain-tuning platform grown by reduced pressure chemical vapour deposition鈥 Electrochemical and Solid-State Letters 13 (11) pp.H388-H390, 2010.
  127. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E.H.C. Parker and D.R. Leadley 鈥淓ffect of Growth Rate on the Threading Dislocation Density in Relaxed SiGe Buffers Grown by Reduced Pressure Chemical Vapor Deposition at High Temperature鈥 Semiconductor Science and Technology 25 (8) 085007, 2010.
  128. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley 鈥淩everse graded SiGe/Ge/Si buffers for high-composition virtual substrates鈥 Journal of Applied Physics 107 (6) 064304, 2010.
  129. M. Myronov, D. R. Leadley and Y. Shiraki 鈥淗igh mobility holes in a strained Ge quantum well grown on a thin and relaxed Si0.4Ge0.6/LT-Si0.4Ge0.6/Si(001) virtual substrate鈥 Applied Physics Letters 94, 092108, 2009.
  130. V.A. Shah, A. Dobbie, M. Myronov, D.J.F. Fulgoni, L.J. Nash, D.R. Leadley 鈥淩everse graded relaxed buffers for high Ge content SiGe virtual substrates鈥 Applied Physics Letters 93, 192103, 2008.
  131. I.L. Drichko, A. M. Dyakonov, I. Y. Smirnov, A. V. Suslov, Y. M. Galperin, V. Vinokur, M. Myronov and O. A. Mironov "Low-temperature conductance mechanisms in p-Si/SiGe heterostructures in high magnetic fields" Physica Status Solidi C - Current Topics in Solid State Physics 5 (3) 829-834, 2008.
  132. I.B. Berkutov, V. V. Andrievskii, Y. F. Komnik, D. R. Leadley, M. Myronov, H. von Kanel and O. A. Mironov (2008). "A new method of investigating the quantum channel surface." Journal of Physics-Condensed Matter 20 (22), 2008.
  133. M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh 鈥淥bservation of pronounced effect of compressive strain on room-temperature transport properties of two-dimensional hole gas in a Ge quantum well鈥 Applied Physics Express 1, 051402, 2008.
  134. I.L. Drichko, A.M. Dyakonov, I.Y. Smirnov, A.V. Suslov, Y.M. Galperin, V. Vinokur, M. Myronov, O.A. Mironov and D.R. Leadley "Magnetotransport in low-density p-Si/SiGe heterostructures: From metal through hopping insulator to Wigner glass." Physical Review B 77 (8), 085327, 2008.
  135. M. Myronov, K. Sawano, Y. Shiraki, K.M. Itoh 鈥淩oom-temperature transport properties of high drift mobility two-dimensional electron gas confined in a strained Si quantum well鈥 Applied Physics Express 1, 021402, 2008.
  136. M. Myronov, K. Sawano, Y. Shiraki, T. Mouri, K.M. Itoh 鈥淥bservation of high mobility 2DHG with very high hole density in the modulation doped strained Ge quantum well at room-temperature鈥 Physica E: Low-dimensional systems and nanostructures 40 (6) pp.1935-1937 2008.

Conferences:

  1. M. Myronov 鈥淓mergence of the highest mobility holes in a 2D system epitaxially grown on a silicon wafer鈥 E-MRS 2023 FALL, 18-21 September 2023, Warsaw, Poland. (Invited talk)
  2. M. Myronov 鈥淏reakthrough in enhancement of hole mobility in strained germanium semiconductor leads to emergence of new class of quantum materials鈥 INESS-2023-mESC-IS, , 17-21 July 2023, Akyaka, Turkey. (Invited talk)
  3. M. Myronov, Jan Kycia, Philip Waldron, Pedro Barrios, Sergei Studenikin 鈥淗ole mobility in strained germanium exceeds 4脳106 cm2V-1s-1鈥, ICSI-ISTDM 2023 21-25 May 2023, Como, Italy. (Talk)
  4. M. Myronov "Epitaxy of Silicon Carbide for Power Devices" ECS PRiME 2020 international conference, USA, 4-9 October 2020, Virtual. (Invited)
  5. M. Myronov "Quantum transport of high mobility 2DHG in a strained GeSn quantum well " 2020 IEEE Photonics Society Summer Topical Meeting Series, 13-15 July 2020, USA, Virtual. (Invited)
  6. M. Myronov 鈥淎ppearance of 2D holes in strained epitaxial Germanium Tin semiconductor鈥 Cool Electrons in Flatlands, Catania, Italy, 15-24 June 2020, Virtual. (Invited)
  7. G.Colston, S. Wirths and M. Myronov 鈥淟ow temperature homoepitaxy of 4H-SiC epilayers on off-axis and on-axis substrates with high levels of electrically active dopants鈥 ICSCRM 2019, Kyoto, Japan, 29 September – 4 October 2019. (Oral)
  8. M. Myronov 鈥淎ppearance of high mobility 2D holes in strained epitaxial Germanium鈥 18th conference Gettering and Defect Engineering in Semiconductor Technology (Gadest 2019), Zeuthen, Germany, 22-27 September 2019. (Invited)
  9. M. Myronov 鈥淯nlocking new devices applications with novel wafer scale Silicon Carbide heteroepitaxy鈥 7th International conference on Nanomaterials and Advanced Energy Storage Systems (INESS 2019), Nursultan, Kazakhstan, 7-9 August 2019. (Invited)
  10. Y. Gul, M. Myronov, S. Holmes M. Pepper 鈥淨uantum technologies using strained Ge quantum well epitaxial material鈥 ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  11. M. Myronov and G. Colston 鈥淎 Cubic SiC Temperature Sensor for Harsh Environment Applications鈥 ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  12. S. De Cesari, A. Balocchi, E. Vitiello, P. Jahandar, T. Aman, X. Marie, M. Myronov, F. Pezzoli 鈥淐arrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon鈥 ICSI-ISTDM 2019 conference, Madison, USA, 2-6 June 2019. (Oral)
  13. M. Myronov 鈥淏allistic hole transport and self-organised fractional quantisation in a strained Germanium quantum wire鈥 Quantum transport in 2D systems – III Session Workshop VI (W6), Luchon, France, May 25 - June 1, 2019. (Invited)
  14. M. Myronov 鈥淥vercoming limitations of Silicon Carbide heteroepitaxy on Silicon wafers鈥 MIPRO 2019 conference, Opatija, Croatia, 20-24 May 2019. (Invited)
  15. M. Myronov 鈥淲afer scale SiC on Si strain tuning platform for integration of 2D and compound semiconductor materials鈥 UK MBE workshop 2019, Sheffield, UK 11-12 April 2019. (Invited)

  16. M. Myronov 鈥淎ppearance of high mobility carriers in strained epitaxial Germanium鈥 Americas International Meeting on Electrochemistry and Solid State Science (AiMES) 2018, Cancun, Mexico, 30th - September 4th October 2018. (Invited)

  17. G. Colston and M. Myronov 鈥淎chieving extremely high levels of electrically active doping in silicon carbide epitaxy鈥 50th International Conference on Solid State Devices and Materials 2018 (SSDM 2018), Tokyo, Japan, 9-13th September 2018. (Oral)

  18. M. Myronov 鈥淴-ray diffraction from advanced epitaxial group-IV semiconductor structures鈥 14th Biennial Conference on High Resolution X-ray Diffraction and Imaging (XTOP 2018), Bari, Italy, 3-7th September 2018, (Invited)

  19. M. Myronov 鈥淚n situ doping of silicon carbide semiconductor via epitaxy鈥 6thInternational Conference on Nanomaterials and Advanced Energy Storage Systems (INESS-2018), Astana, Kazakhstan, 8-10th August 2018. (Invited)

  20. F. Pezzoli, S. de Cesari, A. Balocchi, E. Vitiello, P. Jahandar, E. Grilli, T. Amand, X. Marie, M. Myronov 鈥淐arrier and Spin Coherent Dynamics in Strained Germanium-Tin Semiconductor on Silicon鈥 34th International Conference on the Physics of Semiconductors (ICPS 2018), Montpellier, France, 29th July – 3rd August 2018. (Oral)

  21. M. Myronov, D.R. Leadley, J. Lloyd-Hughes, P. Nataf, J. Faist 鈥淐ritical mode softening in THz ultra-strong coupling with sGe QWs beyond the Hopfield model鈥 34th International Conference on the Physics of Semiconductors (ICPS 2018), Montpellier, France, 29th July – 3rd August 2018. (Poster)
  22. M. Myronov 鈥淓pitaxy of advanced group IV alloys for nanodevices鈥 E-MRS Spring 2018, Strasbourg, France, 17-22nd June 2018. (Invited)
  23. G. Colston and M. Myronov 鈥淰ery high levels of electrically active n-type doping in 3C-SiC epilayers grown on a standard Silicon (001) substrate鈥, Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  24. Y. Gul, S. N. Holmes, M. Myronov, S. Kumar, M. Pepper 鈥淪elf-organised fractional quantisation of 1D holes in strained epitaxial Ge鈥 Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  25. Y.A. Bioud, A. Boucherif, M. Myronov, A. Soltani, G. Patriarche, N. Braidy, D. Drouin and R. Ar猫s 鈥淗igh-quality Ge/Si virtual substrates fabricated by a low cost and scalable process鈥 Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Oral)
  26. J. Cregeen, G. Colston and M. Myronov 鈥淗igh quality SiO2 growth at temperatures below 1000 掳C on epitaxial 3C-SiC on a Si (001) substrate鈥 Joint ISTDM/ICSI 2018 conference, Potsdam, Germany, 27-31st May 2018. (Poster)
  27. M. Myronov 鈥淕ermanium Tin heterosystem: new opportunities for spintronics, photonics and electronics鈥 XXII Symposium 鈥淣anophysics and Nanoelectronics鈥, Nizhny Novgorod, Russia,12-15th March 2018 .(Invited)
  28. L.Q. Zhou, G. Colston, O. Trushkevych, M. Myronov, D.R. Leadley and R.S. Edwards 鈥淨uality-factor and frequency shifts of suspended Ge membranes鈥 2017 International Congress on Ultrasonics, Honolulu, Hawaii, USA, 18-20 December 2017. (Oral).
  29. M. Myronov 鈥淗igh mobility Ge channels on Si: Fabrication and Applications鈥 E-MRS Fall 2017, Warsaw, Poland, 18-21st September 2017. (Invited).
  30. R.W. Millar, D.C.S. Dumas, K. Gallacher, P. Jahandar, M. Myronov and D. J. Paul 鈥淭ensile strained GeSn mid-infrared light emitters鈥 2017 IEEE 14th International Conference on Group IV Photonics, Berlin, Germany, 23-25 August 2017. (Oral)
  31. M. Myronov 鈥淥vercoming limitations of Silicon Carbide heteroepitaxy on Silicon wafers鈥 5th International Conference on Nanomaterials and Advanced Energy Storage Systems (INESS-2017), Astana, Kazakhstan, 9–11 August 2017. (Invited).
  32. M. Myronov and G. Colston 鈥淚ntegration of Silicon Carbide on Silicon for its application in ultraviolet photodetectors鈥 2017 Ieee Photonics Society Summer Topical Meeting Series, San Juan, Puerto Rico, 10-12 July 2017. (Invited)
  33. F. Pezzoli, S. De Cesari, E. Vitiello and M. Myronov 鈥淪pin-optoelectronic functionalities of group IV materials鈥 2017 Ieee Photonics Society Summer Topical Meeting Series, San Juan, Puerto Rico, 10-12 July 2017. (Invited)
  34. D. Weisshaupt, P. Jahandar, G. Colston, P. Allred, J. Schulze and M. Myronov 鈥淚mpact of Sn segregation on GeSn epi-layers growth by RP-CVD鈥 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO) Opatija, Croatia, 22-26 May 2017. (Oral)
  35. A. Mukanova, G. Colston, D. Batyrbekuly, A. Molkenova, A. Nurpeissova, M. Myronov, Z. Bakenov 鈥3C-SiC thin film as negative electrode for Li-ion batteries鈥, E-MRS Spring 2017, Strasbourg, France, 22- 26th May 2017. (Poster presentation)
  36. Peter Newton, Rhodri Mansell, Stuart Holmes, Maksym Myronov and Crispin Barnes 鈥漌eak Localization and Weak Antilocalization in Doped Germanium Epilayers鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017. (Oral presentation)
  37. Fabio Pezzoli, Sebastiano De Cesari, Andrea Balocchi, Elisa Vitiello, David Patchett, E. Grilli, X. Marie and Maksym Myronov 鈥淩adiative recombination and optical spin orientation in GeSn epitaxial layers鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017. (Oral presentation)
  38. R.W. Millar, D.C.S. Dumas, K. Gallacher, D. Patchett, M. Myronov and D.J. Paul 鈥淭ensile strained GeSn on Si substrates emitting in the mid-infrared鈥漈he 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  39. Maksym Myronov and Gerard Colston 鈥淥vercoming limitations of Silicon Carbide heteroepitaxy on Silicon Wafers鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  40. Y. Gul, S. N. Holmes, P. J. Newton, D. J. P. Ellis, C. Morrison, M. Myronov, M. Pepper and C. H. W. Barnes 鈥淨uantised conductance in 1-dimensional p-type Ge鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  41. J. Foronda, C. Morrison and M. Myronov 鈥淲eak Anti-Localisation in a High Mobility Ge 2D-Hole-Gas Originating from the k-Cubic Rashba Spin-Orbit Interaction鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  42. Vineet Sivadasan, Stephen Rhead, David Leadley and Maksym Myronov 鈥淜irkendall void formation in reverse step graded SiGe/Ge/Si(001) virtual substrates鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  43. Oliver Newell, Christopher Morrison, Chirojyoti Rava, Steffen Wiedmann, Uli Zeitler, Maksym Myronov 鈥淐omposite fermions observed in strained epitaxial germanium鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  44. Maksym Myronov and Chris Morrison 鈥2D holes mobility anisotropy in strained epitaxial Germanium鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  45. M. Failla, J. Keller, G. Scalari, C. Maissen, J. Faist, C. Reichl, W. Wegscheider, O. J. Newell, D. R. Leadley, C. Morrison, M. Myronov and J. Lloyd Hughes 鈥淭erahertz time-domain magneto-spectroscopy of spin-split heavy-hole gases in strained Ge quantum wells: the Rashba and optical quantum Hall effects鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Oral presentation)
  46. Phil Allred and Maksym Myronov 鈥淯ltra-High Boron Doping in Silicon Epliayers Grown using RP-CVD鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  47. Pedram Jahandar, David Weisshaupt, Gerard Colston, Phil Allred, Jorg Schulze, Maksym Myronov 鈥淓ffect of Ge precursor on heteroepitaxy of Ge1-xSnx on Si substrate鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  48. Gerard Colston and Maksym Myronov 鈥淓ffect of Thickness on the Optical Properties of monocrystalline 3C-SiC Epilayers grown on Silicon鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  49. Oliver J. Newell, David Leadley and Maksym Myronov 鈥淕rowth of germanium dioxide exhibiting a very low density of interface traps on a strained germanium quantum well鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  50. L.Q. Zhou, G. Colston, M.J. Pearce, R.G. Prince, O. Trushkevych, M. Myronov, D.R. Leadley and R.S. Edwards 鈥淢easurement of stress in semiconductor crystalline membranes using ultrasonic techniques鈥 The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10), Coventry, UK, 14-19th May 2017 (Poster presentation)
  51. A. Mukanova, M. Myronov, G. Colston, D. Batyrbekuly, A. Moldabayeva, A. Molkenova, Zh. Bakenov, 鈥淪ilicon carbide thin film as negative electrode for lithium ion batteries鈥, The 20th Topical Meeting of the International Society of Electrochemistry, Buenos Aires, Argentina, 19-22th March 2017. (Oral presentation)
  52. A. Nurpeissova, A. Molkenova, A. Mukanova, Golsten, Z. Bakenov, M. Myronov 鈥淪iC thin film anode for LIB鈥 The 57th Battery Symposium, Chiba, Japan, 29 November - 1 December 2016. (Oral presentation)
  53. M. Prunnila, D. Gunnarsson, A. Timofeev, M. J. Prest, T. E. Whall, E. H. C. Parker, M. Myronov and D. R. Leadley 鈥淗igh Performance Semiconductor-Superconductor Junction Coolers鈥 ASC 2016, San Diego 2016.
  54. L.J. Woodend, P.M. Gammon, V.A. Shah, A. P茅rez-Tom谩s, F. Li, D.A. Hamilton, M. Myronov and P.A. Mawby 鈥淐ryogenic Characterisation and Modelling of Commercial SiC MOSFETs鈥 11th European Conference on Silicon Carbide and Related Materials (ECSCRM 2016), Halkidiki, Greece, 25-29 September 2016. (Poster presentation)
  55. A. Molkenova, S. Otepov, A. Moldabayeva, A. Zheksembekova, M. Myronov, G. Colston, Z. Bakenov 鈥淒evelopment of novel Si-based thin film anode materials for Li-ion batteries鈥 The 4th International Conference on Nanomaterials and Advanced Energy Storage, Almaty, Kazakhstan, 10-12th August 2016. (Poster presentation)
  56. Y. Gul, P. J. Newton, S. N. Holmes, C. Morrison, M. Myronov, M. Pepper, C. H. W. Barnes 鈥淐onductance quantization in one-dimensional p-type Ge鈥 33rd International Conference on the Physics of Semiconductors, Beijing, China, 31 July – 5 August 2016. (Oral presentation)
  57. M. Myronov and G. Colston 鈥Low-temperature heteroepitaxy of very high crystalline quality 3C-SiC on standard Si wafer鈥 UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Oral presentation)
  58. O.J. Newell, C. Morrison, C. Rava, S. Wiedmann, U. Zeitler, M. Myronov 鈥淔ractional Quantum Hall Effect in high mobility compressive strained Ge Quantum Wells鈥 UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Oral presentation) 
  59. Y. Gul, P. J. Newton, S. N. Holmes, C. Morrison, M. Myronov, M. Pepper, C. H. W. Barnes 鈥淐onductance quantization in one-dimensional p-type Ge鈥UK Semiconductors 2016 conference, Sheffield, UK, 6-7 July (Poster presentation)
  60. A. Benediktovitch, A. Mikhalychev, T. Ulyanenkova, M. Myronov, V.M. Kaganer, A. Ulyanenkov 鈥X-ray diffraction analysis of misfit dislocations if SiGe/Si thin layers: the role of finite thickness on dislocation induced peak shape鈥 15th European Powder Diffraction Conference (EPDIC15), Bari, Italy, 12-15 June 2016. (Oral presentation) 
  61. M. Myronov 鈥淨uantum phenomena in epitaxial strained Germanium鈥International SiGe Technology and Device Meeting (ISTDM 2016), Nagoya, Japan, 7-11 June 2016. (Invited talk)
  62. M. Myronov 鈥淕ermanium spintronics鈥 E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016 (Invited talk)
  63. M. Myronov and G. Colston 鈥淲afer scale heteroepitaxy of very high crystalline quality 3C-SiC on a standard Si substrate鈥 E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oralpresentation)
  64. F. Pezzoli, A. Giorgioniand M. Myronov 鈥Radiative recombination in GeSn epitaxial architectures鈥 E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oral presentation)
  65. J.D. Murphy, A.I. Pointon, V.A. Shah, C. Morrison, M. Myronov, R.J. Falster 鈥淢inority carrier lifetime in indium doped silicon for photovoltaics鈥 E-MRS 2016 spring meeting, Lille, France, 2-6 May 2016. (Oral presentation).
  66. C. Morrison, J. Foronda and M. Myronov 鈥淭he Rashba spin-orbit interaction in germanium quantum wells鈥 Magnetism 2016 conference, Sheffield, UK, 4-5 April 2016. (Oral presentation)
  67. A. Czett, Cs. Buday, F. Korsoos, M. Myronov, M. Wilson, S. Savtchouk 鈥淒opant profiling by C-V and Q-V methods extended to the lightly doped samples鈥 Gettering and Defect Engineering in Semiconductor Technology 2015, Bad Staffelstein, Germany, 20-25 September 2015. (Poster presentation)
  68. M. Myronov, G. Colston, S. D. Rhead 鈥Low temperature epitaxy of crystalline 3C鈥SiC on standard Si substrates鈥 International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Giardini Naxos, Italy, 4-9 October 2015. (Poster presentation)
  69. G. Colston, S. D. Rhead, V. ShahO. Newell, K. Sawhney, I. Dolbnya, I. Pape, D. R. Leadley, M. Myronov鈥淢apping the strain state and tilt of 3C-SiC/Si(001) suspended structures using 渭-XRD鈥 International Conference on Silicon Carbide and Related Materials 2015 (ICSCRM 2015), Giardini Naxos, Italy, 4-9 October 2015. (Poster presentation) 
  70. G. Colston, S. D. Rhead, V. ShahO. Newell, K. Sawhney, I. Dolbnya, I. Pape, D. R. Leadley, M. Myronov 鈥淢apping the Residual Strain and Tilt in a Suspended 3C-SiC membrane by the use of Synchrotron based X-ray Diffraction鈥 7th Size-Strain conference 'Diffraction Analysis of the Microstructure of Materials' (SS-VII), Oxford, Uk 21-24 September 2015. (Oral presentation)
  71. C. Morrison, D. R. Leadley and M. Myronov 鈥淎nisotropic low temperature quantum magnetotransport of an ultra-high mobility 2D hole gas in a strained Ge quantum well鈥 21st International Conference on Electronic Properties of Two-Dimensional Systems, Sendai, Japan, 26-31 July 2015. (Poster presentation)
  72. M. Myronov, C. Morrison and D. R. Leadley 鈥淪urface Orientation Dependant Anisotropy of a High Mobility 2DHG in a Strained Germanium Quantum Well鈥 17th International Conference on Modulated Semiconductor Structures, Sendai, Japan, 26-31 July 2015.  (Oral presentation)
  73. M. Myronov 鈥淨uantum phenomena of 2D hole gas in compressive strained epitaxial Germanium鈥 Quantum transport in 2D systems Workshop, Luchon, France, 23-30 May 2015. (Invited talk) 
  74. M. Myronov, C. Morrison, J. Foronda and D. Leadley 鈥淓vidence of strong spin-orbit interaction in strained epitaxial Germanium鈥 The 9th International Conference on Silicon Epitaxy and Heterostructures (ICSI-9), Montreal, Quebec, Canada, 17-25 May 2015. (Oral presentation)
  75. M. Myronov, D. Patchett, S. Rhead, D. Leadley 鈥淭hermally driven strain relaxation and diffusion of highly strained GeSn epilayers grown on a standard Si(001) substrate鈥 鈥 E-MRS 2015 spring meeting, Lille, France, 11-15 May 2015. (Oral presentation)
  76. M. Failla, M. Myronov, C. Morrison, D. Leadley and J. Lloyd-Hughes 鈥淭erahertz time-domain cyclotron spectroscopy of the cubic Rashba spin orbit interaction in strained germanium quantum wells with high mobility heavy holes鈥 Optical Terahertz Science & Technology Conference (OTST 2015), San Diego, CA, USA, 8-13 March 2015. (Poster presentation
  77. V. Sivadasan, M. Myronov, S. Rhead, J. Halpin, D. Leadley 鈥淩everse terrace graded virtual substrates grown using RP-CVD on on-axis and 6掳 off-axis substrates for future developments in III-V materials integration鈥 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, 26-28 January 2015. (Oral presentation)
  78. S. Dushenko, M. Koike, Y. Ando, M. Myronov, and M. Shiraishi鈥淒emonstration of spin transport in n-type Germanium epilayers at room temperature.鈥 59th Annual Magnetism and Magnetic Materials Conference, Honolulu, Hawaii, USA, 3-7 November 2014. (Oral presentation)
  79. M. Myronov 鈥淗igh mobility strained Ge quantum well heterostructures鈥 ASM Users meeting, Munich, Germany, 25th September 2014. (Invited talk)
  80. Gerard COLSTON, Maksym MYRONOV, Stephen RHEAD, Vishal SHAH, Yogesh SHARMA, Philip MAWBY, David LEADLEY 鈥淪i1-xCx/Si(001) Heterostructures for use in Schottky Diode Rectifiers Demonstrating High Breakdown Voltage and Negligible Leakage Current 鈥 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Oral presentation)
  81. Chunwa CHAN, Peter GAMMON, Vishal SHAH, Chen HAN, Mike JENNINGS, Craig FISHER, Amador P脡REZ, Maksym MYRONOV, Philip MAWBY 鈥淪imulations of a lateral PiN diode on Si/SiC substrate for high temperature applications鈥 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Poster presentation)
  82. Han CHEN, Peter GAMMON, Vishal SHAH, Craig FISHER, Chunwa CHAN, Saeed JAHDI, Dean HAMILTON, Mike JENNINGS, Maksym MYRONOV, David LEADLEY, Phil MAWBY 鈥淐haracterisation of commercial SiC power devices at cryogenic temperatures 鈥 10th European Conference on Silicon Carbide and Related Materials (ECSCRM 2014) Grenoble, France, 21-25 September, 2014. (Poster presentation 
  83. A. Benediktovich, A. Zhylik, T. Ulyanenkova, M. Myronov and A. Ulyanenkov 鈥淐haracterization of dislocations in germanium layers grown on (011) and (111) oriented silicon by coplanar and non-coplanar x-ray diffraction鈥 12th Conference on High-Resolution X-ray Diffraction and Imaging (XTOP2014) Villard de Lans, France, 14-19 September 2014. (Oral presentation)
  84. D.C.S. Dumas, K. Gallacher, M. Myronov, S. Rhead, D.R. Leadley Douglas J. Paul 鈥Ge/SiGe Quantum Confined Stark Effect Modulators with Low Voltage Swing at 位 = 1550 nm鈥 2014 IEEE 11th International Conference on Group IV Photonics, Paris, France, 27-29 August 2014. (Oral presentation)
  85. C. Morrison, M. Myronov, P. Wi鈥檚niewski, S. Rhead, D. Leadley 鈥淶ero-Field Spin Splitting in a High Mobility Ge 2D Hole Gas鈥 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Oral presentation) 
  86. C. Morrison, M. Myronov, J. Foronda, S. Rhead, D. Leadley 鈥淭ransport Properties of intentionally Undoped Ge Quantum Well Heterostructures鈥 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Poster presentation)
  87. M. Myronov, C. Morrison. J. Halpin, S. Rhead, D. Leadley 鈥淩evealing Groundbreaking Room Temperature 2DHG Mobility in a Strained Germanium Quantum Well鈥 32nd International Conference on the physics of semiconductors, Austin, USA, 10-15 August 2014. (Oral presentation)
  88. M. Failla, C. Morrison, M. Myronov and J. Lloyd-Hughes 鈥淪plit cyclotron resonances in strained Ge quantum well probed by THz time-domain spectroscopy鈥 6th International conference on optical, optoelectronic and photonic materials and applications, Leeds, UK, 27 July – 1 August 2014. (Oral presentation) 
  89. M. Myronov 鈥淩evealing the high room and low temperature mobilities of 2D holes in a strained Ge quantum well heterostructures grown on a standard Si(001) substrate鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Invited talk)
  90. S.D. Rhead, V.A. Shah, J.E. Halpin, M. Myronov, D.H. Patchett, P.S. Allred, V. Kachkanov, I.P. Dolbnya, N.R. Wilson, and D.R. Leadley 鈥淭ensile strain mapping in flat germanium membranes鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Oral presentation)
  91. J. Halpin, M. Myronov, S. Rhead, and D. R. Leadley 鈥淣-type SiGe/Ge superlatticestructures for terahertz emission鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  92. P.S. Allred, M. Myronov, S. D. Rhead, R. Warburton, G. Intermite, G. Buller, and D. R. Leadley 鈥淥ptimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications鈥International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  93. M. Myronov, S. D. Rhead, G. Colston, and D. R. Leadley 鈥淩P-CVD growth of high carbon content Si1-xCx epilayers using disilane and trimethylsilane precursors鈥International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  94. D. Patchett, M. Myronov, S. Rhead, J. Halpin, and D. Leadley 鈥淐hallenges in epitaxial growth by RP-CVD of strained and relaxed GeSn epilayers on a Si substrate鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014. (Poster presentation)
  95. C. Morrison, M. Myronov, J. Foronda, C. Casteleiro, J. E. Halpin, S. D. Rhead, and D. R. Leadley 鈥淨uantum transport of a high mobility two dimensional hole gas in a strained Ge quantum well鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014.(Oral presentation)
  96. J. Foronda, C. Morrison, M. Myronov, J. E. Halpin, S. D. Rhead, and D. R. Leadley 鈥淲eak anti-localization behavior of high mobility 2D hole gas in a strained Ge QW heterostructure鈥 International SiGe Technology and Devices Meeting (ISTDM 2014), Singapore, 2-4 June 2014.(Poster presentation)
  97. M. Myronov 鈥淕rowth of high mobility strained Ge QW heterostructures鈥 UK MBE 2014, The University of Manchester, Manchester, UK, 9th April 2014. (Invited tallk)
  98. C. Morrison, M. Myronov, P. Wi艣niewski, S. Rhead, D. R. Leadley 鈥Observation of Rashba zero-field spin splitting in a Ge 2D hole gas鈥 Magnetism 2014, The University of Manchester, Manchester UK, 7-8 April 2014. (Oral presentation)
  99. G. R. Bell, C. Morrison, J. Foronda, M. Walker, V. A. Shah, M. Myronov, D. R. Leadley鈥淚nterdiffusion at the NiFe/Ge interface studied by X-Ray Photoemission Spectroscopy鈥 Magnetism 2014, The University of Manchester, Manchester UK, 7-8 April 2014. (Oral presentation)
  100. 44. M. Myronov, C. Morrison, J. Halpin, S. Rhead, J. Foronda, D. Leadley 鈥淓xtremely high room temperature mobility of 2D holes in a compressive strained Ge quantum well heterostructure grown by RP-CVD on a standard Si(001) substrate鈥 E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Oral presentation)
  101. T. Ulyanenkova, M. Myronov, A. Ulyanenkov鈥Boron doped cubic silicon probed by High resolution X-ray RSMs鈥 E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Poster presentation)
  102. V. Sivadasan, M. Myronov, S. Rhead and D.R. Leadley 鈥淐omparison of SiGe relaxed buffer layers grown on Si(001) substrate by forward and reverse Ge grading approaches鈥 E-MRS 2014 spring meeting, Lille, France, 26-30 May 2014. (Oral presentation) 
  103. Van Huy Nguyen, M. Myronov, P. Allred, J. Halpin A. Dobbie and D.R. Leadley 鈥淒evelopments in germanium-on-silicon epitaxy by reduced pressure chemical vapor deposition鈥 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Poster presentation) 
  104. V.A. Shah, O. Trushkevych, M. Myronov, S. Rhead, J. Halpin, R. Edwards, and D.R. Leadley 鈥淭ensile strained Ge membranes鈥 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Poster presentation)
  105. E.H.C. Parker, M.J. Prest, J.S. Richardson Bullock, M. Myronov, T.E. Whall, D.R. Leadley T. Brien, P. Mauskopf, D. Gunnarsson and M. Prunnila 鈥淣ew concepts in infra-red detection鈥 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm Waterfront Congress Centre, Stockholm, Sweden, 7-9 April, 2014. (Invited talk)
  106. P. M. Gammon, C. A. Fisher, V. A. Shah, M. R. Jennings, A. P茅rez-Tom谩s, S. E. Burrows, M. Myronov, D. R. Leadley, and P. A. Mawby 鈥淭he Cryogenic Testing and Characterisation of SiC PiN Diodes鈥 International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), Miyazaki, Japan, 29 September – 4 October 2013. (Poster presentation)
  107. J. S. Reparaz, E. Ch谩vez-脕ngel, J. Gomis-Bresco, M. R. Wagner, J. Cuffe, V. A. Shah, M. Myronov, D. R. Leadley, A. Shchepetov, M. Prunnila, J. Ahopelto, F. Alzina, and C. M. Sotomayor Torres 鈥Thermal conductivity reduction in Si and Ge free-standing membranes investigated using Raman thermometry鈥 19th International Workshop on Thermal Investigations of ICs and Systems, Berlin, Germany, 25-27 September 2013 (Poster presentation)
  108. M. Myronov, C. Morrison, C. Casteleiro, J. Halpin, S. Rhead, J. Foronda, D.R. Leadley 鈥淕roundbreaking room-temperature mobility of 2D holes in a strained Ge quantum well heterostructure grown by Reduced Pressure Chemical Vapour Deposition鈥 2013 International Conference on Solid State Devices and Materials (SSDM 2013) Fukuoka, Japan, September 24-27, 2013. (Oral presentation)
  109. G. Intermite, R.E. Warburton, M. Myronov, P. Allred, D.R. Leadley, K. Gallacher, D.J. Paul, N.J. Pilgrim, L.J.M. Lever, Z. Ikonic, R.W. Kelsall, and G.S. Buller, "Design and performance of a prototype mesa–geometry Ge–on–Si single–photon avalanche diode detector at 1310 nm and 1550 nm wavelengths", The IEEE 10th International Conference on Group IV Photonics (GFP), Seoul, Korea, August 28-30, 2013. (Oral presentation)
  110. G. Intermite, R.E. Warburton, M. Myronov, P. Allred, D.R. Leadley, K. Gallacher, D.J. Paul, N.J. Pilgrim, L.J.M. Lever, Z. Ikonic, R.W. Kelsall, and G.S. Buller, "Ge–on–Si single–photon avalanche diode near–IR detectors", UK Semiconductor 2013, Sheffield, UK, July 3-4, 2013. (Oral presentation)
  111. C. Casteleiro, M. Myronov, J.E. Halpin, V.A. Shah, D.R. Leadley 鈥淓lectrical and Structural Characterization of Thermally Grown GeO2 on Epitaxial Ge on a Si(001) Substrate鈥 The 8th International Conference on Silicon Epitaxy and Heterostructures (ICSI-8), Kyushu University, Fukuoka, Japan, June 2-6, 2013. (Poster presentation)
  112. O. Mironov, A. Hassan, S. Kiatgamolchai, M. Uhlarz, A. Dobbie, R.J.H. Morris, E. Cizmar, A. Feher, S. Gabani, V Shah, M Myronov, D.R. Leadley 鈥淯ltra High Hole Mobilities in a Pure Strained Ge Quantum Well鈥 ICSI-8, Kyushu University, Fukuoka, Japan, June 2-6, 2013. (Oral presentation)
  113. J. S. Richardson-Bullock, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A. Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall1, E. H. C. Parker and D. R. Leadley 鈥淗ole-phonon energy loss rate in boron doped silicon鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Poster presentation)
  114. C. Casteleiro, J.E. Halpin, V. A. Shah, M. Myronov, D.R. Leadley 鈥淭hermally grown GeO2 on epitaxial Ge on Si(001) substrate鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Poster presentation)
  115. V.A. Shah, M. Myronov, L. Bawden, M.J. Prest, J.S. Richardson-Bullock, P.M. Gammon, S. Rhead, E.H.C. Parker, T.E Whall, D.R Leadley 鈥淣ovel fabrication technique for Ge membranes鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Poster presentation)
  116. E. Ch谩vez, J. Gomis-Bresco, F. Alzina, J.S. Reparaz, , V.A. Shah, M. Myronov, D.R. Leadley, C.M. Sotomayor 鈥淔lexural mode dispersion in ultra-thin Ge membranes鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Poster presentation)
  117. T. E. Whall, M. J. Prest, J. S. Richardson-Bullock, V. A. Shah, M. Myronov, E. H. C. Parker and D. R. Leadley.M. Prunnila and D. Gunnarsson.T. Brien, D. Morozov and P. Mauskopf 鈥淐ooltronics: a new low-temperature tunneling-technology based on Silicon鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Invited talk)
  118. A.H.A. Hassan, O.A. Mironov, A. Feher, E. Cizmar, S. Gabani, R.J.H. Morris, A. Dobbie, M. Myronov, and D.R. Leadley 鈥淧ure Ge Quantum Well with High Hole Mobility鈥 The 14th Edition of the 鈥業nternational Conference on Ultimate Integration on Silicon (ULIS 2013), The University of 糖心TV, Coventry, UK, 19-21 March 2013. (Poster presentation)
  119. P. Velha, K. F. Gallacher, D. Dumas, D. J. Paul, M. Myronov, and D. Leadley 鈥淒irect Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  120. V. A. Shah, M. Myronov, C. Wongwanitwatana, R. Morris, M. Prest, J. Richardson-Bullock, E. Parker, T. Whall, and D. Leadley 鈥淪imple Fabrication of Suspended Germanium Structures and Their Electrical Properties from High Quality Ge on Si(001) Layers鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  121. P. Velha, D. J. Paul, M. Myronov, and D. Leadley 鈥淟ong Wavelength 鈮1.9 渭m Germanium for Optoelectronics Using Process Induced Strain鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  122. K. F. Gallacher, P. Velha, D. J. Paul, I. Maclaren, M. Myronov, and D. Leadly 鈥淟ow Specific Ohmic Contacts to n-type Germanium Using a Low Temperature NiGe Process鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  123. P. Velha, K. F. Gallacher, D. Dumas, D. J. Paul, M. Myronov, and D. Leadley 鈥淒irect Band-gap Electroluminescence from Strained n-Ge Light Emitting Diodes鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Oral presentation)
  124. C. Wongwanitwattana, V. A. Shah, M. Myronov, E. Parker, T. Whall, and D. Leadley 鈥淎ccurate Reactive Ion Etching of Si, Ge and P Doped Ge in an SF6-O2 Radio-Frequency Plasma鈥 222nd Meeting of the Electrochemical Society, Honolulu, Hawaii Convention Center and the Hilton Hawaiian Village, Hawaii 7-12 October 2012. (Poster presentation)
  125. T. Ulyanenkova, M. Myronov, A. Benediktovitch, A. Mikhalychev, J. Halpin and A. Ulyanenkov 鈥淐haracterization of SiGe thin films by laboratory X-ray instrument鈥 The 11th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, Saint-Petersburg, Russia, 15-20 September, 2012. (Poster presentation)
  126. D.J. Norris, A Dobbie, M Myronov, DR Leadley, EHC Parker and T Walther 鈥淪urface roughening of chemical vapour deposited SiGe layers鈥 The 15th European Microscopy Congress Manchester Central, UK 16-21 September 2012 (Oral presentation)
  127. P. Velha, K. Gallacher, D. Dumas, D.J. Paul, M. Myronov and D.R. Leadley "Tuning the Electroluminescence of n-Ge LEDs using Process Induced Strain" IEEE Group IV Photonics 2012, San Diego, USA, August 29-31, 2012. (Oral presentation)
  128. B. Xu, C. Li, M. Myronov, and K. Fobelets 鈥淪i1-xGex Nanowire Arrays for Thermoelectric Power Generation鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Oral presentation)
  129. A. Dobbie, M. Myronov, R.J.H. Morris, M.J. Prest, J.S. Richardson-Bullock, A. Hassan, V. Shah, E.H.C. Parker, T. Whall, and D. Leadley 鈥淯ltra-High Hall Mobility (1x106 cm2V-1s-1) in a Two-Dimensional Hole Gas in a Strained Germanium Quantum Well Grown by Reduced Pressure CVD鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Oral presentation)
  130. J. Halpin, V. Shah, M. Myronov, and D. Leadley 鈥淓pitaxial growth of highly strained SiGe layers directly on Si(001) substrate鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  131. M. Myronov, V. A. Shah, S. Rhead, and D. R. Leadley 鈥淓pitaxial growth of tensile strained SiB alloy on a Si substrate鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  132. V. A. Shah, M. Myronov, C. Wongwanitwatana, R. J. H. Morris, M. J. Prest, J. Richardson-Bullock, E. H. C. Parker, T. E. Whall, and D. R. Leadley 鈥淪imple fabrication of suspended Germanium structures and their electrical properties from high quality Ge on Si(001) layers鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  133. V.H. Nguyen, A. Dobbie, M. Myronov, and D.R. Leadley 鈥淯nderstanding the Role of the Low Temperature Seed Layer in the Growth of Low Defect Relaxed Germanium Layers on (111) Silicon by Reduced Pressure CVD鈥 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) UC Berkeley, Berkeley, CA, USA, 4-6 June 2012. (Poster presentation)
  134. M. Myronov, J. Halpin, H.A.A. Alabdulali and D.R. Leadley 鈥淎 new approach to grow very thin, smooth and relaxed SiGe epilayers on a Si(100) substrate鈥 E-MRS 2012 Spring Meeting, Strasbourg, France, 15-17 May, 2012(Oral presentation)
  135. P. Velha, D.J. Paul, M. Myronov, D.R. Leadley 鈥淧rocess-Induced Strain Bandgap Reduction in Germanium Nanostructures鈥 Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, California, USA, 6-11 May 2012. (Oral presentation)
  136. P. Velha, K. Gallacher, D. C. Dumas, M. Myronov, D. R. Leadley, and D. J. Paul 鈥淒irect band-gap electroluminescence from strained n-doped germanium diode鈥 Conference on Lasers and Electro-Optics (CLEO) 2012, San Jose, California, USA, 6-11 May 2012. (Oral presentation)
  137. M. Myronov, Xue-Chao Liu, A. Dobbie and D.R. Leadley 鈥淧recise thickness and strain control during epitaxial growth of strained Ge/SiGe multilayers by industrial class CVD鈥, 2011 International Conference on Solid State Devices and Materials (SSDM 2011) Aichi Industry & Labor Center (WINC AICHI), Nagoya, Japan, September 28-30, 2011. (Oral presentation)
  138. R.J.H. Morris M.G. Dowsett, R. Beanland, A. Dobbie, M. Myronov and D.L. Leadley 鈥淥2+ probe-sample conditions for ultra-low energy SIMS depth profiling of Si0.4Ge0.6/Ge quantum well structures鈥 18th International Conference on Secondary Ion Mass Spectrometry (SIMS XVIII), Riva del Garda, Trentino, Italy, 18-23 September 2011.
  139. L. Lever, Y. Hu, M. Myronov, X. Liu, N. Owens, F.Y. Gardes, I.P. Marko, S.J. Sweeney, Z. Ikoni麓c, D.R. Leadley, G.T. Reed, and R.W. Kelsall 鈥淪train engineering of the electro-absorption response in Ge/SiGe multiple quantum well heterostructures鈥 The 8th International Conference on Group IV Photonics, Royal Society Place, London, UK, 14-16 September 2011.
  140. M. Myronov 鈥High hole mobility strained Ge quantum well heterostructures grown by Reduced Pressure Chemical Vapor Deposition鈥, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Invited talk)
  141. Van Huy Nguyen, A. Dobbie, M. Myronov, D.J. Norris, T. Walther,D.R. Leadley 鈥Epitaxial Growth by RP-CVD of Relaxed Germanium Layers on (110) and (111) Silicon Substrates鈥 鈥, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Oral presentation)
  142. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley 鈥淩everse Terrace Graded SiGe substrates for CMOS and Optoelectronic Integration鈥, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011. (Poster presentation)
  143. J. S. Richardson-Bullock, M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah, R.J.H. Morris, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker and D.R. Leadley鈥淚mproved Cooling Performance in Strained Silicon Tunnel Junctions鈥 鈥, 7th International Conference on Si epitaxy and heterostructures ICSI-7, Leuven, Belgium August 28 – September 1, 2011.(Poster presentation)
  144. M. J. Prest, J. T. Muhonen, M. Prunnila, D. Gunnarsson, J. S. Richardson-Bullock, V. A. Shah, R. J. H. Morris, A. Dobbie, M. Myronov, T. E. Whall, E. H. C. Parker, and D. R. Leadley 鈥淪train Enhancement of Electron Cooling in Silicon-Superconductor Tunnel Junctions鈥26th International conference on low temperature physics, Beijing, China 10-17 August 2011. (Poster presentation)
  145. Gary Ternent, Douglas J. Paul, Charles N. Ironside, Kris Seuranine, Donald MacLaren, Mike Kelly, Dingli Zuo, David R. Leadley, Maksym Myronov 鈥淪ub-50 nm GaAs/AlAs and Si/SiGe Self-Aligned Resonant Tunnelling Diodes鈥 UK Semiconductors 2011, Endcliffe Village, University of Sheffield conference 6-7 July 2011. (Invited talk)
  146. D.J. Norris, I.M. Ross, A. Dobbie, M. Myronov, T.E. Whall, E.H.C. Parker, D.R. Leadley and T. Walther 鈥A TEM study of Ge-on-(111)silicon structures for potential use in high performance PMOS device technology鈥 Proc. MSM-17, Cambridge, UK, J. Phys Conf. Ser. 326 012023, 2011.
  147. E. Simoen, J. Mitard, B. De Jaeger, G. Eneman, A. Dobbie, M. Myronov, D.R. Leadley, M. Meuris, T. Hoffmann and C. Claeys 鈥Low-frequency noise in strained and relaxed Ge pMOSFETs鈥 International Conference on Solid-State and Integrated Circuit Technology 2010 (ICSICT 2010) InterContinental Hotel, Shanghai, China, 1-4 November 2010, p.69. (Oral presentation)
  148. A. Komatsu, K. Nasu, Y. Hoshi, T. Kurebayashi, K. Sawano, M. Myronov, H. Nohira, Y. Shiraki 鈥淪tudy of HfO2/Si/strained-Ge/SiGe using Angle Resolved X-ray Photoelectron Spectroscopy鈥 218th ECS Meeting High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonics, October 10 - October 15, 2010, Las Vegas, NV p. 1543 (Oral presentation)
  149. M. Myronov, K. Sawano, D.R. Leadley and Y. Shiraki 鈥淰ery high mobility 2D holes in strained Ge quantum well epilayers grown by Reduced Pressure Chemical Vapor Deposition鈥2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. K-8-1. (Oral presentation)
  150. Y. Kawamura, M. Uematsu, K Itoh, Y. Hoshi, K. Sawano, Y. Shiraki, E. Haller and M. Myronov鈥淕e Self-Diffusion in Compressively strained Ge Grown on Relaxed Si0.2Ge0.8鈥 2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. B-6-5. (Oral presentation)
  151. J. Mitard, B. De Jaeger, E. Eneman, A. Dobbie, M. Myronov, M. Kobayashi, J. Geypen, H. Bender, B. Vincent, R. Krom, J. Franco, G. Winderickx, E. Vrancken, W. E. Wang, J. Tseng, R. Loo, K. De Meyer, M. Caymax, L. Pantisano, D. R. Leadley, M. Meuris, P. Absil, S. Biesemans, T. Hoffmann 鈥淗igh Hole-Mobility 65nm Biaxially-Strained Ge-pFETs: Fabrication, Analysis and Optimization鈥 2010 International Conference on Solid State Devices and Materials (SSDM 2010), The University of Tokyo, Tokyo, Japan, 22-24 September 2010, p. C-9-2. (Oral presentation)
  152. I.D. Feranchuk, F.Rinaldi, S. Menzel, M. Myronov, A. Dobbie, D.R. Leadley, A. Zhilik, K. Saito, and A. Ulyanenkov鈥淗IGH-RESOLUTION RECIPROCAL SPACE MAPPING OF MULTILAYERS WITH CONCENTRATION AND RELAXATION GRADIENTS鈥 10th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, University of 糖心TV, UK, 20th-23rd September 2010 (Poster presentation)
  153. A. Zhilik, M. Myronov, A. Dobbie, D. R. Leadley, H. Guerault, T. Ulyanenkova, A. Benediktovitch, A. Ulyanenkov 鈥淩ECIPROCAL SPACE MAPPING OF GRADED SiGe BUFFERS GROWN ON NON-STANDARD ORIENTATION Si SUBSTRATES鈥 10th Biennial Conference on High Resolution X-Ray Diffraction and Imaging, University of 糖心TV, UK, 20th-23rd September 2010. (Poster presentation)
  154. A. Ulyanenkov, M. Myronov, A. Dobbie, D.R. Leadley, H. Guerault, A. Benediktovitch, A. Zhilik, T. Ulyanenkova, K. Shcherbachev 鈥淗igh-Resolution X-ray Reciprocal Space Mapping of High Ge Content Graded SiGe Buffers Grown on Non-Standard Orientation Si Substrates鈥 The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, 8-13 August 2010. (Poster presentation)
  155. J. Halpin, A. Dobbie, V. A. Shah, M. Myronov and D. R. Leadley 鈥淯nderstanding Tensile Strain in Relaxed Germanium Epitaxial Layers on (001) Silicon Substrates鈥 Condensed Matter and Materials Physics (CMMP 2010) conference, The University of 糖心TV, UK, 2010. (Poster presentation)
  156. M. Myronov, Xue-Chao Liu A. Dobbie and D.R. Leadley 鈥淢onolayer thickness control during epitaxial growth of high Ge content strained Ge/SiGe multilayers by RP-CVD鈥 The 16th International Conference on Crystal Growth(ICCG-16) in conjunction with The 14th International Conference on Vapor Growth and Epitaxy(ICVGE-14), Beijing, China, 8-13 August 2010. (Oral presentation)
  157. A. Dobbie, M. Myronov, Van Huy Nguyen, Xue-Chao Liu and D. R. Leadley 鈥Thermal Stability of Strained Ge Layers Grown on Reverse-Graded Si0.2Ge0.8 Relaxed Buffers by RP-CVD鈥UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  158. Xue-Chao Liu,M. Myronov, A. Dobbie, V. H. Nguyen, R. J. H. Morris, D. R. Leadley 鈥淕rowth and Characterization of Ge/SiGe Multiple Quantum Wells鈥UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  159. Van Huy Nguyen, A. Dobbie, M. Myronov, and D.R. Leadley 鈥Defect Evaluation in Ge and Si1-xGex Epitaxial Layers using an Iodine-Based Selective Etchant鈥 UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  160. V. A. Shah, A. Dobbie, M. Myronov, D.R. Leadley 鈥淭hickness studies of high quality Ge layers on Si (001) substrates鈥 UK Semiconductors 2010 conference, The University of Sheffield, UK, 7-8 July 2010. (Poster presentation)
  161. M. Myronov, V.A. Shah, Xue-Chao Liu, A. Dobbie, Van H. Nguyen, D.R. Leadley and E.H.C. Parker 鈥淗ighly strained (100)Si epilayers grown on SiGe by RP-CVD鈥 E-MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June, 2010. (Oral presentation)
  162. M. Myronov, Xue-Chao Liuand D.R. Leadley 鈥淓pitaxial growth of Ge layers by RP-CVD using a digermane precursor鈥 E-MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June 2010. (Oral presentation)
  163. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E. H. C. Parker and D. R. Leadley 鈥淩elaxation of Strained Germanium Layers Grown on Si0.2Ge0.8 Relaxed Buffers by RP-CVD with in-situ H2 Annealing鈥 -MRS 2010 Spring Meeting, Strasbourg, France, 7-11 June 2010. (Oral presentation)
  164. A. Dobbie, M. Myronov, Xue-Chao Liu, Van H. Nguyen, E. H. C. Parker and D. R. Leadley 鈥淚nvestigation of the Thermal Stability of Strained Ge Layers Grown at Low Temperature by Reduced-Pressure Chemical Vapour Deposition on Relaxed Si0.2Ge0.8 Relaxed Buffers鈥 MRS Spring Meeting, San Francisco, USA 5-9 April 2010. (Oral presentation)
  165. Xue-Chao Liu, M. Myronov, A. Dobbie, Van H. Nguyen, and D. R. Leadley 鈥淣on-destructive thickness characterization of Si and Ge based heterostructure by x-ray diffraction and reflectivity鈥 5th International SiGe Technology and Device Meeting (ISTDM 2010) Stockholm, Sweden, 24-26 May 2010. (Poster presentation)
  166. V.A. Shah, A. Dobbie, M. Myronov, D.R. Leadley 鈥淗igh quality relaxed Ge layers grown directly on a Si (001) substrate鈥 5th International SiGe Technology and Device Meeting (ISTDM 2010) Stockholm, Sweden, 24-26 May 2010. (Poster presentation)
  167. A. Komatsu, K. Nasu, Y. Hoshi, T. Kurebayashi, K. Sawano, M. Myronov, H. Nohira, Y. Shiraki 鈥淪tudy of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy鈥 The 57th Spring Meeting of The Japan Society of Applied Physics, March 17-20, 2010, Tokai University, Shonan Campus. (Oral presentation)
  168. K. Nasu, K. Sawano, Y. Hoshi, T. Kurebayashi, M. Myronov, Y. Shiraki 鈥滻mprovement of strain stability in strained Ge channel by Si cap layer鈥 The 57th Spring Meeting of The Japan Society of Applied Physics, March 17-20, 2010, Tokai University, Shonan Campus. (Oral presentation)
  169. D.J. Norris, I.M. Ross, A.G. Cullis, T. Walther, M. Myronov, A. Dobbie, T. Whall, E.H.C. Parker, D.R. Leadley, B. De Jaeger, W. Lee and M. Meuris 鈥淭EM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology鈥 Electron Microscopy and Analysis Group Conference 2009 (EMAG 2009); Journal of Physics: Conference Series 241 (2010) 012044.
  170. M. Myronov, V.A. Shah, A. Dobbie, Xue-Chao Liu, Van H. Nguyen and D. R. Leadley 鈥淐ompressively strained Ge channel heterostructures grown by RP-CVD for the next generation CMOS devices鈥. 2009 International Conference on Solid State Devices and Materials (SSDM 2009), October 6-9, 2009, Sendai Kokusai Hotel, Sendai, Japan, pp. . (Oral presentation)
  171. D. R. Leadley, V.A. Shah, A. Dobbieand M. Myronov 鈥淩everse graded virtual substrates for strained Ge devices鈥. UK Semiconductors 2009, July 1-2, 2009, Firth Court, University of Sheffield, Sheffield, UK, pp. C-O-11. (Oral presentation)
  172. M. Myronov鈥淩ealization of globally strained Ge layers鈥  E-MRS 2009, Strasbourg, France, June 8-12, 2009p. (Invited talk)
  173. M. Myronov, A. Dobbie, V.A. Shah and D.R. Leadley 鈥淓pitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD鈥 E-MRS 2009, Strasbourg, France, June 8-12, 2009. (Oral presentation)
  174. A. Dobbie, M. Myronov, X. Liu, E. H. C. Parker and D. R. Leadley 鈥淓ffect of Si1-xGex Growth Rate on the Threading Dislocation Density in Fully Relaxed Si1-xGex/Si(100) Virtual Substrates Grown at High Temperature by RP-CVD鈥 E-MRS 2009, Strasbourg, France, June 8-12, 2009. (Poster presentation)
  175. M. Myronov, A. Dobbie, V.A. Shah and D.R. Leadley 鈥淟ow temperature epitaxial growth of compressive strained Ge layers on reverse linearly graded virtual substrate by RP-CVD鈥 6th International Conference on Silicon Epitaxy and Heterostructures (ICSI-6), May 17 – 22, 2009, Los Angeles, California, USA. (Oral presentation)
  176. M. Myronov, D.R. Leadley and Y. Shiraki 鈥淒emonstration of high mobility holes in a strained Ge channel grown on a novel thin and relaxed SiGe/LT-SiGe/Si(001) virtual substrate鈥 2008 International Conference on Solid State Devices and Materials (SSDM 2008), September 24-26, 2008, Tsukuba International Congress Center, Tsukuba, Ibaraki, Japan. (Oral and poster presentations)
  177. M. Myronov, K. Sawano and Y. Shiraki 鈥淥bservation of more mobile and conductive holes in strained Ge epilayers than electrons in strained Si ones at room-temperature鈥 European Materials Research Society 2008 conference (E-MRS 2008), May 26 – 30, 2008, Strasbourg, France, p.I-5. (Oral presentation)
  178. M. Myronov, K. Sawano, Y. Shiraki and K.M. Itoh 鈥淥bservation of pronounced effect of compressive strain on room-temperature transport properties of 2DHG confined in Ge quantum wells鈥 ISTDM 2008, May 11-14, 2008, Hsinchu, Taiwan, pp.151-152. (Poster presentation)

Books

1. M. Myronov 鈥淐hapter 3: Molecular Beam Epitaxy of High Mobility Silicon, Silicon Germanium and Germanium Quantum Well Heterostructures鈥 in Molecular Beam Epitaxy: From Research to Mass Production 2nd edition, Elsevier, (2018).

2. D. Leadley, V. Shah, J. Ahopelto, F. Alzina, E. Ch谩vez-脕ngel, J. Muhonen, M. Myronov, A. G. Nassiopoulou, H. Nguyen, E. Parker, J. Pekola, M. Prest, M. Prunnila, J. S. Reparaz, A. Shchepetov, C. Sotomayor-Torres, K. Valalaki and T. Whall. Thermal Isolation Through Nanostructuring. Beyond-CMOS Nanodevices 1, John Wiley & Sons, Inc.: 331-363 (2014).

3. D. Leadley, M. Prest, J. Ahopelto, T. Brien, D. Gunnarsson, P. Mauskopf, J. Muhonen, M. Myronov, H. Nguyen, E. Parker, M. Prunnila, J. Richardson-Bullock, V. Shah, T. Whall and Q.-T. Zhao. Silicon-Based Cooling Elements. Beyond-CMOS Nanodevices 1, John Wiley & Sons, Inc.: 303-330 (2014).

4. D. Leadley, A. Dobbie, M. Myronov, V. Shah, and E.H.C. Parker 鈥淐hapter 3: Strained Si and Ge channels鈥 pp.69-126, in Nanoscale CMOS: Innovative Materials, Modeling and Characterization edited by F. Balestra, ISBN: 978-1-84821-180-3, 544 pages, Wiley, (June 2010).

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