Power Electronics Reliability and Characterisation Lab - PERC Lab
Power Electronics Reliability and Characterisation Lab (PERC Lab)
The mission of the PERC Lab is to accelerate the adoption of silicon carbide (SiC) and gallium nitride (GaN) technologies by establishing world-class testing standards, enhancing the absolute lifetime reliability of next-generation power electronics. The PERC Lab academics are pioneers in advanced characterisation methodologies for wide bandgap power electronic devices, de-risking the adoption of WBG devices through comprehensive SiC and GaN characterisation, unlocking unprecedented efficiency and ultimate reliability for the future of power electronics. Our research targets emerging ultra-wide bandgap devices (like gallium oxide) without forgetting silicon power devices.
Latest News
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Recent Publications
July 2026: The paper Linear Mode Robustness Analysis of 1200V Silicon and SiC MOSFETs has been accepted for publication on IEEE Transactions on Power Electronics. version available on IEEEXplore.
July 2026: The Trade-off between Avalanche Ruggedness and Short Circuit Performance in Different SiC MOSFET and Cascode JFET Technologies presented at IPEC/ECCE Asia 2026 is now available on IEEEXplore.
April 2026: published in IEEE Transactions on Electron Devices. The research focusses on short circuit, third quadrant and avalanche ruggedness of different SiC MOSFET Technologies
Funders/Support
The research activities at the Power Electronics Characterisation and Reliability lab have been supported by
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