Thermal Oxidation and Annealing
The facility is equipped with a range of furnace units. Some units are capable of thermal oxidation of substrates, others are capable of annealing processes and some are capable of both.
Thermal Oxidation
- Carbolite CTF18300 tube furnace with oxidizing atmosphere. Gas flow up to 10 SLM and temperature up to 1750掳C. Supports substrates up to 75mm.
- Hitech oxidation furnace. Precision programmable flow of inert and oxidizing gases from 0.1 to 10 SLM. Multistage programmable temperature profile. Temperatures up to 1700掳C with inert atmospheres and 1400掳C with oxidizing atmospheres.
Annealing
- Carbolite CTF18300 tube furnace with inert and forming gas atmospheres. Gas flow up to 10 SLM and temperature up to 1750掳C. Supports substrates up to 75mm.
- Thermco minibrute tube furnace incorporating inert and atmospheres. Gas flow up to 7 SLM and temperatures up to 1000掳C. Supports substrates up to 4" diameter
- AGA Heatpulse 610 rapid thermal annealler (RTA). Inert atmosphere processing up to 1300掳C. Ramp rates up to 200掳C/s.
Thermal oxidation of silicon carbide